A new technical paper titled “Characteristics of a Novel FinFET with Multi-Enhanced Operation Gates (MEOG FinFET)” was published by researchers at Changzhou University. “This study illustrates a type ...
A US court has told Samsung to pay $400 million in damages after it found the company's FinFET technology infringed on a patent originally filed by a South Korean university. The Korea Advanced ...
The industry’s quest to continue on the semiconductor roadmap defined by Moore’s Law has led to the adoption of a new transistor structure. Whether you call them finFETs, tri-gate or 3D transistors, ...
At this week's VLSI 2015 Symposium in Kyoto (Japan), imec reported new results on nanowire FETs and quantum-well FinFETs towards post-FinFET multi-gate device solutions. As the major portion of the ...
Taiwan Semiconductor Manufacturing Company (TSMC) announced that on June 12 at the Symposium on VLSI Technology in Honolulu, Hawaii it demonstrated a record-setting field-effect transistor (FET) that ...
According to the Taiwan Economic Daily, TSMC’s 2nm process has made a major breakthrough. The research and development process is now in advanced stages. The company is optimistic that its risk trial ...
Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...
For more than five decades, the semiconductor industry advanced along a remarkably predictable path. Moore’s Law guided transistor scaling, while Dennard scaling ensured that reducing dimensions ...
At Intel’s recent Technology and Manufacturing Day, Intel presented more details regarding its 10nm FinFET manufacturing process. In the presentation materials, Intel highlighted some of the major ...
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