Italy’s premier electronics event returns June 18, exploring AI at the edge and global supply chain geopolitics. Arrow Electronics World, a flagship annual event, returns to Palaverdi in Parma, Italy, ...

Over the last four decades, using planar and trench technologies, silicon carbide (SiC) MOSFETs have evolved from high-resistance, low-yield transistors to high-performance, mass-produced MOSFETs.

QSPICE simulations compare BJT transistors, revealing conduction losses, switching behavior, and efficiency trade-offs in power applications. The BJT is considered the most important component in ...

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Event highlights device, system, and application advances, with focus on AI-driven power architectures and emerging technologies. From 9–11 June 2026, Nuremberg will host the PCIM Expo & Conference, ...

From thermal management to photonics, Wolfspeed’s CTO maps silicon carbide’s expanding role in AI infrastructure. In this episode of PEN’s Power Corner, Aalyia Shaukat speaks with Dr. Elif Balkas, CTO ...

Industry investment, OCP standardization efforts, and APEC discussions point to SSTs as a medium-term data center reality. At APEC, there were murmurs on solid-state transformer (SST) technology, ...

Ultra-thin GaN chiplet integrates power and logic, enabling efficient, high-density designs for AI, data centers, and wireless systems. Intel Foundry has demonstrated an ultra-thin gallium nitride ...

High-temperature superconductors (HTSes) have a transition temperature of about −180°C (~90 K). At temperatures below this, the material exhibits a sharp decrease in electrical resistance, close to 0 ...

In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...