Italy’s premier electronics event returns June 18, exploring AI at the edge and global supply chain geopolitics. Arrow Electronics World, a flagship annual event, returns to Palaverdi in Parma, Italy, ...
Over the last four decades, using planar and trench technologies, silicon carbide (SiC) MOSFETs have evolved from high-resistance, low-yield transistors to high-performance, mass-produced MOSFETs.
QSPICE simulations compare BJT transistors, revealing conduction losses, switching behavior, and efficiency trade-offs in power applications. The BJT is considered the most important component in ...
In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing ...
The bidirectional switch (BDS) has been a concept since the 1980s, enabling topologies such as matrix converters, current-source inverters (CSIs), and single-stage AC-DC converters. However, this ...
With this acquisition, Infineon expands its sensor business, enhancing automotive, industrial, and medical sensor capabilities. Infineon Technologies AG acquires the non-optical analog/mixed-signal ...
The recommended insulation monitoring circuit is illustrated in Figure 1. K 1 and K 2 represent the main application positions of Novosense solid-state relays (SSRs) in the insulation monitoring ...
Wolfspeed, Inc. has released its 200mm silicon carbide (SiC) materials products to the commercial sector. This shows that the switch from silicon to SiC technologies is making progress. At first, the ...
The FinFET three-dimensional transistor architecture has become fundamental to modern semiconductor manufacturing. FinFET (Fin Field-Effect Transistor) represents a revolutionary advancement in ...
This article explores the differences between inverters based on silicon power devices and those utilizing WBG technologies, evaluating their advantages, disadvantages, and suitability for different ...
One of the more spirited seminars at APEC, due to its topic of GaN versus SiC, was an insightful discussion with many compelling arguments. Wide-bandgap semiconductors—specifically gallium nitride and ...
2024 has been a crucial year for the power electronics sector in terms of development, preparing for radical changes in 2025 and beyond. 2024 has been a crucial year for the power electronics sector ...
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